"T centers in silicon: an emerging platform as a spin-photon interface"
Silicon is among the most advanced platform for scalable integrated photonics and a high-quality host material for solid-state spins. However, developing an efficient spin-photon interface within silicon is still an active area of research. In this talk, I will present an integrated photonics platform featuring color centers in silicon that operates in the telecom O-band. Specifically, we focus on T centers—a type of carbon-hydrogen defect—with long electron and nuclear spin coherence times. For an efficient photonic interface, we integrate T centers into photonic crystal cavities (PCCs). Using a novel architecture of PCC arrays coupled to a bus waveguide, we achieve wavelength-multiplexed emission from T centers in different cavities and probe signatures of cavity-cavity interactions mediated by the waveguide. Additionally, the same device allows us to investigate factors contributing to T center spectral diffusion. Regarding spin operations, I will discuss our progress in coherent microwave spin control and optical readout for waveguide-integrated individual T centers. These advances represent the first steps toward building a scalable quantum network based on silicon photonics.
